Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope: Difference between revisions
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= Process optimization using the Picoscope = | = Process optimization using the Picoscope = | ||
Before going into details on why it makes sense to optimize the processes using the picoscope process monitoring, we need to have a look at how | Before going into details on why it makes sense to optimize the processes using the picoscope process monitoring, we need to have a look at how monitoring processes is usually done. | ||
== Standard process parameter monitoring == | == Standard process parameter monitoring == | ||
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Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of | Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of | ||
<span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. The | <span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. The | ||
[[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general|Reflected Platen Power]] | # [[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general|<span style="background:silver">Reflected Platen Power</span>]] | ||
# <span style="background:silver">[[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general|Reflected Platen Power]]</span> | |||
<span style="background:silver">Reflected Platen Power</span> | |||
<gallery caption="4 cycles of Process D4 " widths="400" heights="500" perrow="2"> | <gallery caption="4 cycles of Process D4 " widths="400" heights="500" perrow="2"> | ||