Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions

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 !style="background:silver; color:black;" align="center"|Purpose
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-*Oxidation of silicon (for very clean gate oxide layers)
+*Oxidation of silicon wafers (e.g. gate oxide layers)
 |style="background:WhiteSmoke; color:black"|Oxidation:
-*Dry
+*Dry oxidation using O<sub>2</sub>
 |-
 !style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness
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-*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (it takes too long to grow a thicker oxide layer)
+*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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 |style="background:LightGrey; color:black"|Process pressure
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-*1 atm
+*1 atm (no vacuum)
 |-
 |style="background:LightGrey; color:black"|Gasses on the system
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 |style="background:LightGrey; color:black"|Batch size
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-*1-30 100 mm wafers (or 50 mm wafers) per run
+*1-30 100 mm wafers (or 50 mm wafers)
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed