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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=89 Anneal-bond Furnace (C3)]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=89 Anneal-bond Furnace (C3)]'''


==Process knowledge==
==Process knowledge==
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*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page


==Overview of the performance of Anneal Bond furnace and some process related parameters==
 
==Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
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*Oxidation of Si wafers
*Oxidation of Si wafers
*Annealing of processed wafers, eg. bonded wafers from EVG NIL
*Annealing of processed wafers, eg. bonded wafers from EVG NIL
|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|
*Dry
Annealing:
*Wet: with bubbler (water steam + O<sub>2</sub>)
*Using N<sub>2</sub>
Oxidation:
*Dry oxidation using O<sub>2</sub>
*Wet oxidation using H<sub>2</sub>O generated by a bubbler
|-
|-
!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide)
*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
*Wet SiO<sub>2</sub>: 50 Å to ~5 µm (it takes too long to grow a thicker oxide)
*Wet oxide: ~ 0 nm to 3 µm (23 hours oxidation at 1100 <sup>o</sup>C)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm (no vacuum)
|-
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 100 mm wafers (or 50 mm wafers) per run
*1-30 100 mm wafers (or 50 mm wafers)  
|-
|-
|style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:LightGrey; color:black"|Substrate materials allowed
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