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Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]


Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.  
DTU Nanolab has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.  


TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 712-720 <sup>o</sup>C (temperature variation over the furnace tube). It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process.
TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 712-720 <sup>o</sup>C (temperature variation over the furnace tube). It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process.
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