Specific Process Knowledge/Lithography/UVExposure

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UV Exposure Comparison Table

Equipment		KS Aligner	Aligner: MA6 - 2	Aligner: Maskless 01	Aligner: Maskless 02	Inclined UV Lamp
Purpose		Top Side Alignment Back Side Alignment UV exposure	Top Side Alignment Back Side Alignment UV exposure (DUV exposure) Bond alignment	Top Side Alignment Maskless UV exposure	Top Side Alignment Back Side Alignment Maskless UV exposure	UV exposure DUV exposure
Performance	Minimum feature size	1.5µm down to 1µm	1.5µm down to 0.5µm	2µm down to 1µm	1µm down to 0.6µm
	Exposure light/filters/spectrum	350W Hg lamp i-line filter (365nm notch filter), intensity in Constant Intensity mode: 8mW/cm2 @ 365nm 303nm filter optional	500W Hg-Xe lamp i-line filter (365nm notch filter), intensity in Constant Intensity mode: 11mW/cm2 @ 365nm UV350 optics optional UV250 optics optional	365nm LED	375nm laserdiodes or 405nm laserdiodes	1000 W Hg-Xe lamp near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
	Exposure mode	proximity, soft, hard, vacuum contact	proximity, soft, hard, vacuum contact	Projection	Projection	Flood exposure Proximity exposure with home-made chuck and maskholder
Substrates	Batch size	1 small sample 1 50 mm wafer 1 100 mm wafer 1 150 mm wafer	1 small sample 1 50 mm wafer 1 100 mm wafer 1 150 mm wafer	1 small sample, down to 5x5 mm2 1 50 mm wafer 1 100 mm wafer 1 150 mm wafer	1 small sample, down to 3x3 mm2 1 50 mm wafer 1 100 mm wafer 1 150 mm wafer 1 200 mm wafer	all sizes up to 8inch
	Allowed materials	All cleanroom materials except copper and steel Dedicated 2inch chuck for III-V materials	All cleanroom materials except copper and steel Dedicated chuck for III-V materials	All cleanroom materials	All cleanroom materials	All cleanroom materials

KS Aligner

The KS Aligner is placed in E-4

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SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

Training videos: Operation Alignment (on Aligner: MA6-2, but KS Aligner is the same model)

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Process information

The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.

• Information on UV exposure dose

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	vacuum contact, hard contact, soft contact, proximity, flood exposure
	Exposure light/filters	broadband (i-, g-, h-line) 365 nm (i-line) 303 nm
	Minimum structure size	down to 1.25µm
	Mask size	5x5 inch 7x7 inch special holder for 4 x 2" designs on 5x5 inch
	Alignment modes	Top side (TSA) Backside (BSA)
Substrates	Substrate size	small pieces 1x1cm 50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials Dedicated chuck for III-V materials
	Batch	1

Aligner: MA6 - 2

The Aligner: MA6 - 2 is placed in E-4

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The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.

Training videos: Operation Alignment

The user manual, APV, and contact information can be found in LabManager.

Process information

The Aligner: MA6 - 2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.

• Information on UV exposure dose

Alignment

Top Side Alignment:

• TSA microscope standard objectives: 5X, and 10X (20X available)
• TSA microscope special objectives: 11.25X offset (for smaller separation)

• Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
• Maximum distance between TSA microscope objectives: 160 mm
• TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

BackSide Alignment:

• Minimum distance between BSA microscope objectives: 15 mm
• Maximum distance between BSA microscope objectives: 100 mm
• BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
• BSA chuck view ranges:
  • 2": X +/- 8-22mm; Y +/- 0-6mm
  • 4": X +/- 14-46mm; Y +/- 0-10mm
  • 6": X +/- 14-69mm; Y +/- 0-10mm

Microscope field of view (W x H, splitfield):

• TSA 5X
  • Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
  • Camera: 350µm x 500µm (700µm x 500µm full field)
• TSA 10X
  • Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
  • Camera: 150µm x 250µm (350µm x 250µm full field)
• TSA special
  • Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
  • Camera: 150µm x 200µm (300µm x 200µm full field)
• BSA camera
  • Low: 1.5mm x 2mm (3mm x 2mm full field)
  • High: 450µm x 650µm (950µm x 650µm full field)

Equipment performance and process related parameters

Purpose		Mask alignment and UV exposure, potentially DUV exposure 1) Bond alignment
Performance	Exposure mode	vacuum contact, hard contact, soft contact, proximity, flood exposure
	Exposure light/filters	broadband (i-, g-, h-line) 365 nm (i-line) "UV300" (280-350 nm) DUV (240 nm) 1)
	Minimum structure size	Typically 1.25 µm, possibly down to 0.8 µm 1)
	Mask size	5x5 inch 7x7 inch special holder for 4 x 2" designs on 5x5 inch
	Alignment modes	Top side (TSA) Backside (BSA)
Substrates	Substrate size	small pieces 1x1cm 50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials except copper and steel Dedicated chuck for III-V materials
	Batch	1

¹⁾ Not available yet.

Aligner: Maskless 01

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Aligner: Maskless 01 positioned in E-5

The MLA 100 Maskless Aligner located in the E-5 cleanroom is a direct exposure lithography tool. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The system offers top side alignment with high accuracy.

The user manual and contact information can be found in LabManager: Equipment info in LabManager

Process information

Exposure technology

Process parameters

Substrate positioning

Alignment

Optimal use of the maskless aligner

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	Projection
	Exposure light	365nm (LED), FWHM=8nm
	Focusing method	Pneumatic
	Minimum structure size	down to 1µm
	Design formats	GDS-II CIF DXF Gerber HIMT format
	Alignment modes	Top side only
Substrates	Substrate size	maximum writing area: 125x125 mm2 150 mm wafer 100 mm wafer 50 mm wafer pieces down to 5x5 mm2
	Allowed materials	All cleanroom materials
	Batch	1

Aligner: Maskless 02

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THIS SECTION IS UNDER CONSTRUCTION

Special features:

• High resolution (Write Mode I, including Optical Autofocus)
• Backside Alignment
• Basic Gray Scale Exposure
• Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
• High Aspect Ratio Mode for exposure of thick resists
• Upgrade to 8" (stage and exposure area)

Equipment info in LabManager

Process information

Exposure technology

Process Parameters

Features

Alignment

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	Projection
	Exposure light	375nm 405nm (laser diode arrays)
	Focusing method	Optical Pneumatic
	Minimum structure size	down to 600nm 1)
	Design formats	GDS-II CIF DXF Gerber HIMT format
	Alignment modes	Top side alignment Backside alignment Field alignment (chip-by-chip TSA)
Substrates	Substrate size	maximum writing area: 200x200 mm2 200 mm wafer 150 mm wafer 100 mm wafer 50 mm wafer pieces down to 3x3 mm2 1)
	Allowed materials	All cleanroom materials
	Batch	1

¹⁾ with optical autofocus

Inclined UV Lamp

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Inclined UV lamp is placed in E-5

The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.

The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Nanolab workshop.

The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.

The technical specification and the general outline of the equipment can be found in LabManager.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Equipment performance and process related parameters

Purpose		UV exposure
Performance	Exposure mode	Flood exposure Proximity exposure with mask possible for 4inch substrate
	Exposure light/filters	Near UV(350-450nm) Mid UV (260-320nm) Deep UV(220-260nm)
	Minimum structure size
	Mask size	5x5inch optinal
	Alignment modes	No alignment possible
Substrates	Substrate size	Up to 8inch substrates, different shapes
	Allowed materials	All cleanroom materials
	Batch	1