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Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
====Alignment====
*TSA microscope standard objectives: 5X, and 10X (20X available)
*TSA microscope special objectives: 11.25X offset (for smaller separation)
*Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
*Maximum distance between TSA microscope objectives: 160 mm
*TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)
*Minimum distance between BSA microscope objectives: 15 mm
*Maximum distance between BSA microscope objectives: 100 mm
*BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
*BSA chuck view ranges:
**2": X +/-  8-22mm; Y +/- 0-6mm
**4": X +/- 14-46mm; Y +/- 0-10mm
**6": X +/- 14-69mm; Y +/- 0-10mm
'''Field of view of the alignment microscopes:'''
*TSA 5X:
*TSA 10X:
*TSA special:
*BSA low:
*BSA high:


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===