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Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 73: Line 73:
|'''?'''
|'''?'''
|-  
|-  
|HBr flow
|Cl2 flow
|10 sccm
| sccm
|-
|-
|CH<sub>4</sub> flow
|H<sub>2</sub> flow
|5 sccm
| sccm
|-
|-
|Ar flow
|Ar flow
|2 sccm
|0 sccm
|-
|-
|Platen power
|Platen power
Line 86: Line 86:
|-
|-
|Coil power
|Coil power
|600 W
|800 W
|-  
|-  
|Pressure
|Pressure
|5 mTorr
|0.5 mTorr
|-
|-
|Platen chiller  temperature
|Platen chiller  temperature
Line 95: Line 95:
|-
|-
|Comment
|Comment
|Sample crystal bonded (Crystalbond 509, clear color) to Si carrier
|Sample placed on a Si carrier
|}
|}


Line 103: Line 103:
|Etch rate
|Etch rate
|
|
250-350 nm/min (2" wafer)<br>
800 nm/min (small piece)
350-450 nm/min (quarter of a 2" wafer)
|-  
|-  
|Sidewall angle
|Sidewall angle
|
|
85-87<sup>o</sup> (bottom)<br>
85-87<sup>o</sup> <br>
93-95<sup>o</sup> (top)<br>
 
Concave profile
 
|-
|-
|Selectivity (InP:HSQ)
|Selectivity (InP:HSQ)
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