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Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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Image:Picture1.jpg|200 nm wide line structure, t<sub>etch</sub>=25 s
Image:Picture1.jpg|200 nm wide line structure, t<sub>etch</sub>=25 s
Image:Picture4.jpg|200 nm wide line structure, t<sub>etch</sub>=2 min
Image:Picture2.jpg|900 nm wide line structure, t<sub>etch</sub>=2 min
Image:Picture2.jpg|900 nm wide line structure, t<sub>etch</sub>=2 min
Image:Picture3.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=25 s
Image:Picture4.jpg|200 nm wide line structure, t<sub>etch</sub>=2 min
Image:Picture5.jpg|400 nm wide line structure, t<sub>etch</sub>=2 min
Image:Picture5.jpg|400 nm wide line structure, t<sub>etch</sub>=2 min
Image:Picture6.jpg|1 µm wide line structure, t<sub>etch</sub>=2 min
Image:Picture6.jpg|1 µm wide line structure, t<sub>etch</sub>=2 min
Image:Picture3.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=25 s
Image:Picture7.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=2 min
Image:Picture7.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=2 min
Image:Picture8.jpg|Two 1 µm wide line structure, 500 nm gap, t<sub>etch</sub>=2 min
Image:Picture8.jpg|Two 1 µm wide line structure, 500 nm gap, t<sub>etch</sub>=2 min
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