Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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<gallery> | <gallery> | ||
Image:Picture1.jpg| | Image:Picture1.jpg|200 nm wide line structure, t<sub>etch</sub>=25 s | ||
Image:Picture2.jpg | Image:Picture2.jpg|900 nm wide line structure, t<sub>etch</sub>=2 min | ||
Image:Picture3.jpg | Image:Picture3.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=25 s | ||
Image:Picture4.jpg | Image:Picture4.jpg|200 nm wide line structure, t<sub>etch</sub>=2 min | ||
Image:Picture5.jpg | Image:Picture5.jpg|400 nm wide line structure, t<sub>etch</sub>=2 min | ||
Image:Picture6.jpg | Image:Picture6.jpg|1 µm wide line structure, t<sub>etch</sub>=2 min | ||
Image:Picture7.jpg | Image:Picture7.jpg|Two 1 µm wide line structure, 300 nm gap, t<sub>etch</sub>=2 min | ||
Image:Picture8.jpg | Image:Picture8.jpg|Two 1 µm wide line structure, 500 nm gap, t<sub>etch</sub>=2 min | ||
Image:Picture9.jpg | Image:Picture9.jpg|Two 1 µm wide line structure, 1 µm gap, t<sub>etch</sub>=2 min | ||
</gallery> | </gallery> | ||