Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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==Deposition of Titanium Oxide== | ==Deposition of Titanium Oxide== | ||
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!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | !Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ||
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma. | *Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma. | ||
*RF sputtering of TiO2 target | *RF sputtering of TiO2 target | ||
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*ALD (atomic layer deposition) of TiO<sub>2</sub> | *ALD (atomic layer deposition) of TiO<sub>2</sub> | ||
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*Can probably be varied (sputter target: Ti, O2 added during deposition) | *Can probably be varied (sputter target: Ti, O2 added during deposition) | ||
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*unknown | *unknown | ||
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*~10 nm - ~0.5 µm (>2h) | *~10 nm - ~0.5 µm (>2h) | ||
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* 0 nm - 100 nm | * 0 nm - 100 nm | ||
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*3-5 nm/min (RF sputtering) | *3-5 nm/min (RF sputtering) | ||
*0.3 - 0.5 nm/min | *0.3 - 0.5 nm/min | ||
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* 0.06 nm/min - 0.40 nm/min (very recipe and temperature dependent) | * 0.06 nm/min - 0.40 nm/min (very recipe and temperature dependent) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Step coverage | !Step coverage | ||
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*Not Known | *Not Known | ||
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*Done at RT. There is a possibility to run at higher temperatures | *Done at RT. There is a possibility to run at higher temperatures | ||
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*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub> | *120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub> | ||
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*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]] | *[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]] | ||
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* | * | ||
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*1x 100 mm wafers | *1x 100 mm wafers | ||
*1x 150 mm wafers | *1x 150 mm wafers | ||
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ALD1: | ALD1: | ||
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*Pb and poisonous materials only after special agreement | *Pb and poisonous materials only after special agreement | ||
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*Silicon | *Silicon | ||
*Silicon oxide, silicon nitride | *Silicon oxide, silicon nitride | ||