Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

← Older editNewer edit →
VisualWikitext
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,760 edits
added e-beam at top of page as it is in the comparison table
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
No edit summary
Line 15: Line 15:
==Deposition of Silicon using sputter deposition technique==
==Deposition of Silicon using sputter deposition technique==


At DANCHIP you can also deposit silicon the using Wordentec, the Lesker Sputter system or the IBE Ionfab300 sputter systems. One of the advantages here is that you can deposit on any material you like.  
At Nanolab you can also deposit silicon the using Wordentec, the Lesker Sputter system or the IBE Ionfab300 sputter systems. One of the advantages here is that you can deposit on any material you like.  


* [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|Si deposition in IBE⁄IBSD Ionfab300]]  
* [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|Si deposition in IBE⁄IBSD Ionfab300]]  
* [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|Si sputter in Wordentec]]
 
==Deposition of Silicon using PECVD==
 
At Nanolab you can also deposit silicon the using PECVD. The deposition temperature is 300 <sup>o</sup>C. 
 
* [[/Si deposition using PECVD|Si deposition using PECVD3]]


==Comparison of the methods for deposition of Silicon==
==Comparison of the methods for deposition of Silicon==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon"