Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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==Equipment performance and process related parameters== | |||
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | |||
|style="background:WhiteSmoke; color:black"|<b>DRIE-Pegasus</b> | |||
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!style="background:silver; color:black;" align="center" width="80"|Purpose | |||
|style="background:LightGrey; color:black"| Dry etch of | |||
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* Silicon | |||
* Barc | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | |||
|style="background:LightGrey; color:black"|Etch rates | |||
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* Standard processes A and B up to 15 µm/min depending on etch load and feature size | |||
* Other processes: Any number from 200 nm/min to 10 µm/min | |||
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|style="background:LightGrey; color:black"|Uniformity | |||
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* For standard processes better than 3 % across a 150 mm wafer. | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | |||
|style="background:LightGrey; color:black"|RF powers | |||
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* Coil Power 5 kW | |||
* Platen power 300/500 W (HF/LF) | |||
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|style="background:LightGrey; color:black"|Gas flows | |||
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* SF<sub>6</sub>: 0 to 1200 sccm | |||
* O<sub>2</sub>: 0 to 200 sccm | |||
* C<sub>4</sub>F<sub>8</sub>: 0 to 400 sccm | |||
* Ar: 0 to 283 sccm | |||
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|style="background:LightGrey; color:black"|Pressure and temperature | |||
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* Pressure range 4 to 250 mTorr | |||
* Temperature range -20 to 30 degrees C | |||
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|style="background:LightGrey; color:black"|Process options | |||
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* Bosch processes with etch and dep cycles possibly split into three individually controllable parts | |||
* Parameter ramping during process steps | |||
* SOI option to reduce notching at buried | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
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*<nowiki>#</nowiki> small samples on carriers | |||
*<nowiki>#</nowiki> 50 mm wafers: Bonded to carriers | |||
*<nowiki>#</nowiki> 100 mm wafers: Up to 18 wafers in a batch process | |||
*<nowiki>#</nowiki> 150 mm wafers: 1 wafer | |||
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| style="background:LightGrey; color:black"|Allowed materials | |||
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* Silicon wafers | |||
* Quartz wafers need a (semi)conducting layer for clamping | |||
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| style="background:LightGrey; color:black"|Possible masking materials | |||
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* AZ photoresist | |||
* zep resist | |||
* DUV stepper resist (barc + krf) | |||
* Oxides and nitrides | |||
* Aluminium (only very mild processes such as process C and nanoetches) | |||
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== General Pegasus information == | == General Pegasus information == | ||