Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
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This recipe is intended to only for low etch depths that are not very critical with regards to eg. the sidewall profile. For deep etching of silicon you will need to use the bosch process and the coil power. | This recipe is intended to only for low etch depths that are not very critical with regards to eg. the sidewall profile. For deep etching of silicon you will need to use the bosch process and the coil power. | ||
{| border="1" cellspacing="1" cellpadding="1" align="left" | |||
! Wafer ID | |||
! '''Resist before etch''' | |||
! '''Platen power''' | |||
! '''Pressure''' | |||
! '''Flow rate SF6''' | |||
! '''Flow rate O2''' | |||
! '''Flow rate Ar''' | |||
! width="20"| '''T''' | |||
! '''Process time''' | |||
! '''Comment''' | |||
! width="205"|'''Results''' | |||
! '''CD change''' | |||
! '''Profile angles''' | |||
! width="150"|'''Etch rate in Si''' | |||
! '''Etch rate in resist''' | |||
! '''Selectivity (resist:Si)''' | |||
! '''Etch rate in SiO2''' | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|ASE RIE9 | |||
|<!-- '''Resist before etch''' --> 3750nm | |||
|<!--'''Platen power'''--> 100W | |||
|<!--'''Pressure'''--> 80mTorr | |||
|<!--'''Flow rate CF4'''--> 40sccm | |||
|<!--'''Flow rate O2'''--> 27sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 20 | |||
|<!--'''Process time'''--> 30min | |||
|<!--'''Comment'''--> HBC off, resist not burned | |||
|<!--'''Results'''-->[[File:ASE RIE9 c.jpg|200px]][[File:ASE RIE9 f.jpg|200px]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
. | |||
|<!--'''Profile angles'''--> | |||
. | |||
|<!--'''Etch rate in Si'''--> | |||
443.3 nm/min | |||
|<!--'''Etch rate in resist'''--> | |||
91.7 nm/min | |||
|<!--'''Selectivity (resist:Si)'''--> | |||
1:4.8 | |||
|<!--'''Etch rate in Si'''--> | |||
? | |||
|- | |||
|-style="background:white; color:black" | |||
|ASE RIE8 | |||
|<!-- '''Resist before etch''' --> 3750nm | |||
|<!--'''Platen power'''--> 100W | |||
|<!--'''Pressure'''--> 80mTorr | |||
|<!--'''Flow rate CF4'''--> 40sccm | |||
|<!--'''Flow rate O2'''--> 27sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 20 | |||
|<!--'''Process time'''--> 4min | |||
|<!--'''Comment'''--> HBC off | |||
|<!--'''Results'''-->[[File:ASE RIE8 b.jpg|200px]][[File:ASE RIE8 c.jpg|200px]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
. | |||
|<!--'''Profile angles'''--> | |||
. | |||
|<!--'''Etch rate in Si'''--> | |||
440 nm/min | |||
|<!--'''Etch rate in resist'''--> | |||
nm/min | |||
|<!--'''Selectivity (resist:Si)'''--> | |||
|<!--'''Etch rate in Si'''--> | |||
? | |||
| | |||
} | |||