Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 90: | Line 90: | ||
|<!--'''Selectivity (resist:SiO2)'''--> | |<!--'''Selectivity (resist:SiO2)'''--> | ||
>1:4 | >1:4 | ||
|<!--'''Etch rate in Si'''--> | |||
? | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|s007679 | |||
|<!-- '''Mask material''' --> 880nm KRF | |||
|<!-- '''Barc etch''' -->barc etch CF 40s | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 200W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 13sccm | |||
|<!--'''Flow rate H2'''--> 26sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 8 min | |||
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch | |||
|width="200"|<!--'''Results'''--> | |||
[[File:s007679_01.jpg|100px|frameless]] [[File:s007679_04.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
42% (1µm pitch)<br> | |||
48% (4µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
83-89 | |||
|<!--'''Etch depth in SiO2'''--> | |||
>1074 nm | |||
|<!--'''Etch rate'''--> | |||
>134nm/min | |||
|<!--'''Etch depth in resist'''--> | |||
310nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
>1:3.5 | |||
|<!--'''Etch rate in Si'''--> | |<!--'''Etch rate in Si'''--> | ||
? | ? | ||