Specific Process Knowledge/Lithography/UVExposure: Difference between revisions
Appearance
| Line 10: | Line 10: | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]</b> | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]</b> | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner: 6inch]]</b> | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner: 6inch]]</b> | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure# | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b> | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b> | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b> | ||
| Line 32: | Line 32: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Top Side Alignment | *Top Side Alignment | ||
*UV | *Direct UV writing | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*UV exposure | *UV exposure | ||
| Line 47: | Line 47: | ||
*1.25µm | *1.25µm | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *3µm | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
|- | |- | ||
| Line 66: | Line 66: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *365nm LED | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1000 W Hg-Xe lamp | *1000 W Hg-Xe lamp | ||
| Line 81: | Line 80: | ||
*proximity, soft, hard, vacuum contact | *proximity, soft, hard, vacuum contact | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Direct writing | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Flood exposure | *Flood exposure | ||
| Line 104: | Line 103: | ||
*1-25 150 mm wafers with automatic handling | *1-25 150 mm wafers with automatic handling | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 small sample | *1 small sample, down to 5x5 mm<sup>2</sup> | ||
*1 50 mm wafer | *1 50 mm wafer | ||
*1 100 mm wafer | *1 100 mm wafer | ||
| Line 121: | Line 120: | ||
*All cleanroom materials except III-V materials, copper and steel substrates, and type IV films | *All cleanroom materials except III-V materials, copper and steel substrates, and type IV films | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Silicon | ||
*Glass | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*All cleanroom materials | *All cleanroom materials | ||