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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 39: Line 39:
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|392<!-- N2 [sccm] -->
|392<!-- N2 [sccm] -->
|135<!-- B2H6 -->
|<!-- B2H6 -->
|40<!-- PH3 -->
|<!-- PH3 -->
|550 mTorr<!-- Pressure [mTorr] -->
|550 mTorr<!-- Pressure [mTorr] -->
|60LF"<!-- Power [W] -->
|60LF"<!-- Power [W] -->
Line 59: Line 59:
|<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- B2H6 -->
|40<!-- PH3 -->
|<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|900 mTorr<!-- Pressure [mTorr] -->
|30HF<!-- Power [W] -->
|30HF<!-- Power [W] -->
Line 106: Line 106:
|-
|-
|BPSG low stress<!-- Recipe -->
|BPSG low stress<!-- Recipe -->
|12.2-12.4 nm/min<!-- Dep. rate [nm/min] -->
|302 nm/min<!-- Dep. rate [nm/min] -->
|2.017-2.021<!-- RI -->
|1.4598<!-- RI -->
|&plusmn; 1.2-1.6%<!-- Unif. [%] -->
|&plusmn; 1.7%<!-- Unif. [%] -->
|Tensile: 431.6 MPa<!-- Stress [MPa] -->
|Compressive: 1.4 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|55<!-- NH3 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1600<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
|240<!-- B2H6 -->
|240<!-- B2H6 -->
|60<!-- PH3 -->
|60<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|500 mTorr<!-- Pressure [mTorr] -->
|20 W<!-- Power [W] -->
|800LF<!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
|10:00/56:00(stress)<!-- Time [mm:ss] -->
|10:00 <!-- Time [mm:ss] -->
|February 2017 bghe <!--Tested -->
|February 2017 bghe <!--Tested -->


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