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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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|-
|-
|MF SIN<!-- Recipe -->
|LF SiO<!-- Recipe -->
|12.9-13.0 nm/min<!-- Dep. rate [nm/min] -->
|12.9-13.0 nm/min<!-- Dep. rate [nm/min] -->
|2.038-2.044<!-- RI -->
|2.038-2.044<!-- RI -->
Line 44: Line 44:
|February 2017 bghe<!--Tested -->
|February 2017 bghe<!--Tested -->
|-
|-
|LF SIN<!-- Recipe -->
|HF SiO<!-- Recipe -->
|40-43 nm/min<!-- Dep. rate [nm/min] -->
|40-43 nm/min<!-- Dep. rate [nm/min] -->
|1.983-1.984<!-- RI -->
|1.983-1.984<!-- RI -->
Line 61: Line 61:
|February 2017 bghe<!--Tested -->
|February 2017 bghe<!--Tested -->
|-
|-
|HF SiN <!-- Recipe -->
|waveguide <!-- Recipe -->
|12.2-12.4 nm/min<!-- Dep. rate [nm/min] -->
|12.2-12.4 nm/min<!-- Dep. rate [nm/min] -->
|2.017-2.021<!-- RI -->
|2.017-2.021<!-- RI -->
Line 78: Line 78:
|February 2017 bghe<!--Tested -->
|February 2017 bghe<!--Tested -->
|-
|-
| <!-- Recipe -->
|12.2-12.4 nm/min<!-- Dep. rate [nm/min] -->
|2.017-2.021<!-- RI -->
|&plusmn; 1.2-1.6%<!-- Unif. [%] -->
|Tensile: 431.6 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|55<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|900 mTorr<!-- Pressure [mTorr] -->
|20 W<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|10:00/56:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe <!--Tested -->
|-
|}
|}


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