Specific Process Knowledge/Etch/Wet Gold Etch: Difference between revisions

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# Iodine etch: KI:I<sub>2</sub>:H<sub>2</sub>O - 100g:25g:500ml - standard at Danchip. Can be used with AZ resist as mask.
# Iodine etch: KI:I<sub>2</sub>:H<sub>2</sub>O - 100g:25g:500ml - standard at Danchip. Can be used with AZ resist as mask.
# Aqua Regia (Kongevand): HNO<sub>3</sub>:HCl - 1:3 - A very strong acid which will etch most metals and are therefore used when you wish to remove all the gold from your wafer. '''You must be very careful when working with Aqua Regia (Kongevand). It can generate nitrous oxide gases which are very toxic!!'''
# Aqua Regia (Kongevand): HNO<sub>3</sub>:HCl - 1:3 - A very strong acid which will etch most metals and is therefore used when you wish to remove all the gold from your wafer. '''You must be very careful when working with Aqua Regia (Kongevand). It can generate nitrogen oxide gases which are very toxic!!'''





Revision as of 14:55, 23 January 2018

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Ething of Gold can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with IBE by sputtering with Ar ions.


Etching of Gold

Wet Gold Etch can be done in Fumehood 1 or 2 in cleanroom D-3

Wet etching of gold is done making your own set up using a beaker in a fumehood. You can see the APV here.

We have two different solutions:

  1. Iodine etch: KI:I2:H2O - 100g:25g:500ml - standard at Danchip. Can be used with AZ resist as mask.
  2. Aqua Regia (Kongevand): HNO3:HCl - 1:3 - A very strong acid which will etch most metals and is therefore used when you wish to remove all the gold from your wafer. You must be very careful when working with Aqua Regia (Kongevand). It can generate nitrogen oxide gases which are very toxic!!


Comparing the two solutions

Iodine based gold etch Aqua Regia (Kongevand)
General description

Etch of pure Gold with or without photoresist mask.

Etch of pure Gold (as stripper).

Link to safety APV See APV here. See APV here
Chemical solution KI:I2:H2O (100g:25g:500ml) HCl:HNO3 (3:1)
Process temperature 20 oC 20 oC
Possible masking materials

Photoresist (1.5 µm AZ5214E)

Unmasked - used as a stripper

Etch rate

~100 nm/min

~(??) nm/min - fast etch

Batch size

1-5 4" wafers at a time

1-5 4" wafer at a time

Size of substrate Any size and number that can go inside the beaker in use Any size and number that can go inside the beaker in use
Allowed materials

No restrictions when used in beaker. Make a note on the beaker of which materials have been processed.

No restrictions when used in beaker. Make a note on the beaker of which materials have been processed.