Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions

|-style="background:silver; color:black"

!

! Nitride Etch @ 160 ^oC

|-

|-style="background:WhiteSmoke; color:black"

!Generel description

|Etch/strip of silicon nitride

|-

|-style="background:LightGrey; color:black"

!Link to safety APV and KBA

|[http://labmanager.danchip.dtu.dk/d4Show.php?id=1892&mach=130 see APV here]  

[http://kemibrug.dk/KBA/CAS/116297/?show_KBA=1&portaldesign=1 see KBA here]  

|-style="background:WhiteSmoke; color:black"

!Chemical solution

|H₃PO₄    (85 wt%)

|-

|-style="background:LightGrey; color:black"

!Process temperature

|160 ^oC

|-

|-style="background:WhiteSmoke; color:black"

|'''Possible masking materials'''

|

*Thermal oxide (converted si-rich surface)

|-style="background:LightGrey; color:black"

!Etch rate

|

*~26 Å/min (Si-rich Si₃N₄)

|-style="background:WhiteSmoke; color:black"

!Selectivity R_Si₃N₄ / R_SiO₂

|The selectivity (sirich nitride:oxide) is higher at 160 ^oC than at 180 ^oC

|-

|-style="background:LightGrey; color:black"

!Batch size

|

1-25 wafer at a time

|-style="background:WhiteSmoke; color:black"

!Size of substrate

|

2-6" wafers

|-style="background:LightGrey; color:black"

!Allowed materials

|

*Silicon