Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions

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The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers.  
The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers.  
The oxidation recipes on the  furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.


This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  
This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]'''


==Process knowledge==
==Process knowledge==

Revision as of 12:18, 30 August 2017

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Gate Oxide furnace (A2)

Gate Oxide furnace (A2). Positioned in cleanroom B-1

The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers.

The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.

This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.


The user manual, technical information and contact information can be found in LabManager:

Gate Oxide furnace (A2)

Process knowledge


Overview of the performance of the Gate Oxide furnace and some process related parameters

Purpose
  • Oxidation of silicon (for very clean gate oxide layers)
 Oxidation:
  • Dry
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (it takes too long to grow a thicker oxide layer)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2
  • O2
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned) without metal bulk contamination
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