Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=85 LPCVD TEOS furnace]''' | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=85 LPCVD TEOS furnace]''' | ||
==Process Knowledge== | ==Process Knowledge== | ||
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[[Specific Process Knowledge/Thin film deposition/Deposition of TEOS/Deposition of TEOS using LPCVD|Deposition of TEOS using LPCVD]] | [[Specific Process Knowledge/Thin film deposition/Deposition of TEOS/Deposition of TEOS using LPCVD|Deposition of TEOS using LPCVD]] | ||
==Overview of the performance of the LPCVD TEOS furnace and some process related parameters== | ==Overview of the performance of the LPCVD TEOS furnace and some process related parameters== | ||
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|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *712-720 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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*TEOS: 50 sccm | *TEOS: 50 sccm | ||
*O< | *O<sub>2</sub>: 0 sccm | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates |
Revision as of 08:30, 16 January 2017
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LPCVD (Low Pressure Chemical Vapor Deposition) TEOS
Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.
TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 712-720 oC (temperature variation over the furnace tube). It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance.
The LPCVD TEOS has an excellent step coverage and is very good for trench filling. The film thickness is very uniform over each wafer.
The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:
Process Knowledge
Please take a look at the process side for deposition of TEOS oxide:
Deposition of TEOS using LPCVD
Purpose |
Deposition of TEOS - Silicon dioxide based on tetraethoxysilane | |
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Performance | Film thickness |
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Step coverage |
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Film quality |
| |
Process parameter range | Process Temperature |
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Process pressure |
| |
Gas flows |
| |
Substrates | Batch size |
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Substrate material allowed |
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