Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS== | ==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS== | ||
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom | [[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]] | ||
Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time. | Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time. | ||