Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

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Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).

The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1000 ^oC III-V materials only to 450 ^oC Temperature ramp up to 300 ^oC/min
	Process pressure	1 atm Vacuum
	Gasses on the system	N₂
Substrates	Batch size	One 100 mm wafer (or 50 wafer) per run Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
Substrates	Substrate material allowed	A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials) Silicon Silicon oxides Silicon nitrides Quartz Polysilicon Titan III-V materials (on graphite carrier) Silicon wafers (new from the box or RCA cleaned) In doubt: look at the cross contamination chart or send a mail to the Furnace group.

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 *0-1000 <sup>o</sup>C
+*III-V materials only to 450 <sup>o</sup>C
 *Temperature ramp up to 300 <sup>o</sup>C/min
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 |style="background:LightGrey; color:black"|Process pressure