Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions
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|Wet etch of pure Al | |Wet etch of pure Al | ||
|Wet etch of Al + 1.5% Si | |Wet etch of Al + 1.5% Si | ||
|Wet etch/removal: TMAH | | | ||
Wet etch/removal: TMAH<br> | |||
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]] | |||
|Dry plasma etch of Al | |Dry plasma etch of Al | ||
|Sputtering of Al - pure physical etch | |Sputtering of Al - pure physical etch | ||