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Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation of silicon and annealing of the oxide.||style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Dry
*Wet: with torch (H<math>_2</math>+O<math>_2</math>)
*Wet: with torch (H<math>_2</math>+O<math>_2</math>)
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|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (takes too long to make it thicker)
*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 50Å to ~3µm ((takes too long to make it thicker)
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!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left"|Process parameter range
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*1 atm
*1 atm
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*H<math>_2</math>:? sccm
*O<math>_2</math>, N<math>_2</math> and H<math>_2</math>
*N<math>_2</math>:? sccm
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!style="background:silver; color:black" align="left"|Substrates
!style="background:silver; color:black" align="left"|Substrates
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon wafers (new from the box or RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Quartz wafers (RCA cleaned)
*From A4 furnace directly (e.g. incl. Predep HF)
*From A4 furnace directly (e.g. incl. Predep HF)
*In doubt: look at the cross contamination sheet or ask one from the furnace team
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