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Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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'''Predeposition in Furnace (A4):''' POCL1000, 15 min, no further anneal
'''Predeposition in Furnace (A4):''' POCL1000, 15 min, no further anneal
'''Wet Oxidation in Furnace (A3)''': WET1050, 30 min, no further anneal
'''Wet Oxidation in Furnace (A3)''': WET1050, 30 min, no further anneal
'''Anneal in Furnace (C1):''' ANN1000, 30 min in N<sub>2</sub>
'''Anneal in Furnace (C1):''' ANN1000, 30 min in N<sub>2</sub>
'''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal
'''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal


The wafer was analyzed with SIMS and the profile is shown on the graph below:
The wafer was analyzed with SIMS and the profile is shown on the graph below: