Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

Revision as of 11:44, 25 November 2015 view source Kabi (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 1,142 edits →Process parameters ← Older edit		Revision as of 11:45, 25 November 2015 view source Kabi (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 1,142 edits →Process parameters Newer edit →
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	One wafer from Jan2015 was analyzed with SIMS and the profiled is shown on the graph below:		One wafer from Jan2015 was analyzed with SIMS and the profiled is shown on the graph below:

	[[image:Phosphorus_doping2015.jpg~~\|400x600px~~\|left\|thumb\|SIMS Measurement After ~~Pre-dep~~, before and after oxidation respectively]]		[[image:Phosphorus_doping2015.jpg\|left\|thumb\|SIMS Measurement After Predeposition, before and after oxidation respectively]]