Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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 ==Doping profile after Phosphorus Predep process==
+" Result from GreenBelt, @Danchip,Jan 2015"
+====Process parameters====
+'''Recipe:'''  POCL900
+'''Temperature:''' 900 °C
+'''Time:''' 15 min
+'''Anneal:''' 20 min in N<sub>2</sub>
+After removing the oxide in BHF the wafers were oxidized in Phosphor Drive in Furnace (A3) using DRY1050 at 1050°C for 70 min without further annealing in N<sub>2</sub>. Results are listed in the table below:
+{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
+|+ '''Measurements after phosphorus predeposition'''
+|-
+!
+! colspan="1" | Afer predeposition
+! colspan="2" | After Oxidation
+|-
+! width="130" | Test date
+! width="130" | Sheet resistance [&Omega;/sq]
+! width="130" | Oxide thickness [nm]
+! width="130" | Sheet resistance [&Omega;/sq
+|-
+! Aug2012
+| 48
+| 93.1
+| 41.8
+|-
+! Jan2013
+| 50.5
+| 91.3
+| 55.6
+|-
+! Aug2013
+| 58
+| 91,8
+| 41,8
+|-
+! Jan2014
+| 54.1
+| 93.3
+| 33.8
+|-
+! Jan2015
+| 50.8
+| 94.2
+| 39.4
+|-
+|}
+One wafer from Jan2015 was analyzed with SIMS and the profiled is shown on the graph below:
+''Result from Trine Holm Christensen, @Space, Feb. 2015''