Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions

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 We have measured the thickness of a TiO_x film deposited on a 6" si wafer.
 Deposition parameters were:
 Recipe	time	gas	pressure	Gun A	Target A	Target A	power A	Voltage A	Power
 source 3 with oxygen 	600	10% O2 in Ar	3	3	Ti	200	370
+{| border="2" cellspacing="0" cellpadding="10"
+|-
+!style="background:silver; color:black;" align="left"|Recipe
+|style="background:WhiteSmoke; color:black"|source 3 with oxygen
+|-
+!style="background:silver; color:black;" align="left"|time
+|style="background:WhiteSmoke; color:black"|600 s
+|-
+!style="background:silver; color:black;" align="left"|Gas
+|style="background:WhiteSmoke; color:black"|O{sub}2/Ar Ratio 100/10
+|-
+!style="background:silver; color:black;" align="left"|Pressure
+|style="background:WhiteSmoke; color:black"|3 mtorr
+|-
+!style="background:silver; color:black;" align="left"| Gun
+|style="background:WhiteSmoke; color:black"| 3
+|-
+!style="background:silver; color:black;" align="left"|Target
+|style="background:WhiteSmoke; color:black"|Ti
+|-
+!style="background:silver; color:black;" align="left"|Power
+|style="background:WhiteSmoke; color:black"|200 W
+|-
+!style="background:silver; color:black;" align="left"|Voltage
+|style="background:WhiteSmoke; color:black"|370V
+|-
+|}
 ==Overview of the performance of Sputter-System(Lesker) and some process related parameters==