Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

Revision as of 15:24, 7 May 2008

D1 Furnace Apox

D1 Furnace Apox: positioned in cleanroom ?

D1 Furnace Apox is a Tempress? horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 ^oC. Running a batch of apox wafers (oxide>5µm) can take several weeks.

This furnace is positioned in cleanroom ?. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: with bubbler (water steam + N $_{2}$ )
Performance	Film thickness	Wet SiO₂: used for layer thickness >5µm
Process parameter range	Process Temperature	1150 ^oC
	Process pressure	1 atm
	Gas flows	N $_{2}$ :? sccm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)

@@ Line 10: / Line 10: @@
-==A rough overview of the performance of Apox furnace and some process related parameters==
+==Overview of the performance of Apox furnace and some process related parameters==
 {| border="2" cellspacing="0" cellpadding="10"
 |-
 !style="background:silver; color:black;" align="left"|Purpose
-|style="background:LightGrey; color:black"|Oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
+|style="background:LightGrey; color:black"|Oxidation and annealing
+|style="background:WhiteSmoke; color:black"|Oxidation:
 *Wet: with bubbler (water steam + N<math>_2</math>)
 |-
 !style="background:silver; color:black" align="left"|Performance
-|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
+|style="background:LightGrey; color:black"|Film thickness
+|style="background:WhiteSmoke; color:black"|
 *Wet SiO<sub>2</sub>: used for layer thickness >5µm
 |-
-!style="background:silver; color:black" align="left"|Process parameter range
+!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
 *1150 <sup>o</sup>C
 |-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
+|style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
 *1 atm
 |-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
+|style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
 *N<math>_2</math>:? sccm
 |-
-!style="background:silver; color:black" align="left"|Substrates
+!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
 *1-200 4" wafer (or 2" wafers) per run
 |-
-|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (new from the box)
 |-
 |}