Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
New page: ==C3 Furnace Anneal Bond== thumb|300x300px|C2 Furnace Anneal Bond: positioned in cleanroom 2 C3 Furnace Anneal Bond is a Tempress horizontal furnace for oxidation and ... |
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!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: | *Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to make it thicker) | ||
*Wet SiO<sub>2</sub>: | *Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker) | ||
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!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left"|Process parameter range | ||
