Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace

A3 Furnace Phosphorus drive-in

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A3 phosphorus drive-in furnace: positioned in cleanroom 2

A3 Furnace phosphorus drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing and for drive-in of phospher after a pre-deposition of phospher in the A4 Furnace phosporus pre-dep. It can also be used for drive in of phospher which has been ion implanted.

This furnace is the third furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

A rough overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose	Drive-in of phospher, oxidation and annealing	Oxidation: Dry Wet: with torch (H2+O2)
Performance	Film thickness	Dry SiO2: 10Å to ~2000Å (takes too long to make it thicker) Wet SiO2: 10Å to ~5µm ((takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 oC
.	Process pressure	1 atm
.	Gas flows	H$_{2}$:? sccm N$_{2}$:? sccm
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
.	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Quartz wafers (RCA cleaned) From A4 furnace directly (e.g. incl. Predep HF)