Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

← Older editNewer edit →
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
Line 18: Line 18:
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
|-
|-
Line 28: Line 27:
!Generel description
!Generel description
|
|
*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
|
|
*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
*RF sputtering of TiO2 target
|
|
* E-beam evaporation of TiO2
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
|
*ALD (atomic layer deposition) of TiO<sub>2</sub>
|-
|-


Line 42: Line 36:
!Stoichiometry
!Stoichiometry
|
|
*Can probably be varied (sputter target: Ti, O2 added during deposition)
|
|
*unknown
|
|
*unknown
Al<sub>2</sub>O<sub>3</sub>, very good
|
*Temperature dependent - Anatase or amorphous TiO<sub>2</sub>
|-
|-


Line 55: Line 45:
!Film Thickness
!Film Thickness
|
|
*~10nm - ~0.5µm(>2h)
|
|
*~10nm - ~0.5µm(>2h)
|
*~10nm - ~200 nm
|
|
* 0nm - 100nm
* 0nm - 100nm
Line 67: Line 53:
!Deposition rate
!Deposition rate
|
|
*3.0-3.5nm/min (reactive DC sputtering)
|
|
*3 - 5 nm/min (RF sputtering)
*0.3 - 0.5nm/min
|
|
* 1 - 2 Å/s
* (temperature dependent)
|
* Not measured
|-
|-


Line 81: Line 62:
!Step coverage
!Step coverage
|
|
*Not Known
|
|
*Not Known
|
*Not Known
|
|
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
Line 93: Line 70:
!Process Temperature
!Process Temperature
|
|
*Expected to be below 100<sup>o</sup>C
|
|
*Done at RT. There is a possibility to run at higher temperatures
|
|
*Sample temperature can be set to 20-250 <sup>o</sup>C
*120<sup>o</sup>C - 150<sup>o</sup>C:
|
*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub>
*300<sup>o</sup>C - 350<sup>o</sup>C: Anatase TiO<sub>2</sub> 
|-
|-


Line 107: Line 79:
!More info on TiO2
!More info on TiO2
|
|
*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
|
*
|
|
*
|
|
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
Line 121: Line 89:
!Substrate size
!Substrate size
|
|
*1 50mm wafer
*1 100mm wafer
*1 150mm wafer
*1 200mm wafer
*Smaller pieces can be mounted with capton tape
|
*several small samples
*several 50 mm wafers (Ø150mm carrier)
*1x 100 mm wafers
*1x 150 mm wafers
|
|
*1x 2" wafer or
*several smaller samples
|
|
*1-5 100 mm wafers
*1-5 100 mm wafers
Line 144: Line 100:
!'''Allowed materials'''
!'''Allowed materials'''
|
|
*Almost any materials
*not Pb and very poisonous materials
|
*Almost any materials
*Pb and poisonous materials only after special agreement
|  
|  
|
|
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina"