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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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==Recipes on PECVD1 for deposition of silicon oxides==
=Recipes on PECVD1 for deposition of silicon oxides=
===Recipes===
===Recipes===
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{| border="1" cellspacing="0" cellpadding="7"
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==Recipes on PECVD3 for deposition of silicon oxides==
 
=Recipes on PECVD2 for deposition of silicon oxides=
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|N<math>_2</math>O flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|LFSiO
|12
|1420 (setting i software is 710)
|392
|550
|100
|
|-
|}
LF=Low Frequency
 
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|-
|LFSiO
|~100
|~1.48
|<1
|-
|}
 
 
=Recipes on PECVD3 for deposition of silicon oxides=
===Recipes===
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
{| border="1" cellspacing="0" cellpadding="7"
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