Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
| Line 79: | Line 79: | ||
! width="100" | Key words | ! width="100" | Key words | ||
|- | |- | ||
! rowspan=" | ! rowspan="7" | Polysilicon etch <!-- recipe name --> | ||
! Original <!-- step --> | ! Original <!-- step --> | ||
| 30 <!-- chiller temp --> | | 30 <!-- chiller temp --> | ||
! 2.3 <!-- dep time --> | ! 2.3 <!-- dep time --> | ||
| 10 <!-- dep pressure --> | |||
| 50 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 600 <!-- coil power --> | |||
| 5.0 <!-- etch time --> | |||
| 10 <!-- etch pressure --> | |||
| 20 <!-- C4F8 flow --> | |||
| 60 <!-- SF6 flow --> | |||
| 5 <!-- O2 flow --> | |||
| 400 <!-- coil power --> | |||
| 40 <!-- platen power --> | |||
| Old <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]] <!-- link processes --> | |||
| <!-- keywords --> | |||
|- | |||
| Original <!-- step --> | |||
| 30 <!-- chiller temp --> | |||
| 2.3 <!-- dep time --> | |||
| 10 <!-- dep pressure --> | | 10 <!-- dep pressure --> | ||
| 50 <!-- C4F8 flow --> | | 50 <!-- C4F8 flow --> | ||
Revision as of 12:35, 11 December 2014
Comparison of continuous processes
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S004592 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| S00XXX | 8" wafer | S00XXX | Wafer centre | File:S00XX centre.jpg | |||
| S00XXXx | Wafer edge | File:S00XXX dge.jpg | S00XXX | Wafer edge | File:S00xxxx edge.jpg | ||
Comparison of switched processes
| Recipe description | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
| Polysilicon etch | Original | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | Old | 1 | |
| Original | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | Old | 1 | ||
| Cpoly1 | 30 | 1.2 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly2 | 30 | 1.4 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly3 | 30 | 1.6 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly4 | 30 | 1.8 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly5 | 30 | 2.0 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||