Specific Process Knowledge/Wafer and sample drying: Difference between revisions
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''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM. | ''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM. | ||
<gallery caption="Different places to dry your wafers" widths="200px" heights="200px" perrow=" | <gallery caption="Different places to dry your wafers" widths="200px" heights="200px" perrow="2"> | ||
image:image:spin-rinser-dryer-white.jpg|Image(s) of the equipment(s). | image:image:spin-rinser-dryer-white.jpg|Image(s) of the equipment(s). | ||
image:image:spin-rinser-dryer-white.jpg|Image(s) of the equipment(s). | image:image:spin-rinser-dryer-white.jpg|Image(s) of the equipment(s). | ||
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image:image:spin-rinser-dryer-white.jpg|Image(s) of the equipment(s).</gallery> | image:image:spin-rinser-dryer-white.jpg|Image(s) of the equipment(s).</gallery> | ||
[[image:spin-rinser-dryer-white.jpg|200x200px|right|thumb|Image(s) of the equipment(s)]] | |||
<br clear="all" /> | <br clear="all" /> | ||
= Single wafer spin dryers = | = Single wafer spin dryers = | ||