Specific Process Knowledge/Lithography/UVExposure: Difference between revisions
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[[Image:KSaligner.jpg|300x300px|thumb|The KSaligner MA6 is placed in C-1]] | [[Image:KSaligner.jpg|300x300px|thumb|The KSaligner MA6 is placed in C-1]] | ||
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure# | '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2 click here]''' | ||
SUSS Mask Aligner MA6 is designed for high resolution photolithography. | SUSS Mask Aligner MA6 is designed for high resolution photolithography. | ||
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Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment. | Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment. | ||
'''The user manual | '''The user manual, APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager].''' | ||
===Process information=== | ===Process information=== | ||