Specific Process Knowledge/Doping: Difference between revisions
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Generel description | !Generel description | ||
|Dopants introduced by diffusion from gas-phase ( | |Dopants introduced by diffusion from gas-phase (POCl<sub>3</sub>) | ||
|Dopants introduced by diffusion from solid source wafers | |Dopants introduced by diffusion from solid source wafers | ||
|Deposition of doped thin film (oxides or nitrides) | |Deposition of doped thin film (oxides or nitrides) | ||
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!Dopant | !Dopant | ||
| | | | ||
*Phosporous ( | *Phosporous (POCl<sub>3</sub>) | ||
| | | | ||
*Boron (solid source wafers containing B<sub>2</sub>O<sub>3</sub>) | *Boron (solid source wafers containing B<sub>2</sub>O<sub>3</sub>) | ||
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*Phosphorous (PH<sub>3</sub>) | *Phosphorous (PH<sub>3</sub>) | ||
*Boron (B<sub>2</sub>H<sub>6</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub>) | ||
* | *Germanium (GeH<sub>4</sub>) | ||
| | | | ||
*Phosphorous (PH<sub>3</sub>) | *Phosphorous (PH<sub>3</sub>) | ||