Jump to content

Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
Line 198: Line 198:
The Aligner-6inch has a long pass filter designed for SU-8 exposure installed. The SU-8 filter has no transmission in the 250-330nm range, and close to full transmission in the 400-500nm range. In the 350-370nm range, the transmission is approximately 0.5. This results in a broadband exposure light consisting of the i-line (365nm), the h-line (405nm), and the g-line (435nm) from the Hg spectrum. Dependent on the spectral sensitivity of the resist, the optimal dose may be decreased compared to i-line exposure on the KS-Aligner.
The Aligner-6inch has a long pass filter designed for SU-8 exposure installed. The SU-8 filter has no transmission in the 250-330nm range, and close to full transmission in the 400-500nm range. In the 350-370nm range, the transmission is approximately 0.5. This results in a broadband exposure light consisting of the i-line (365nm), the h-line (405nm), and the g-line (435nm) from the Hg spectrum. Dependent on the spectral sensitivity of the resist, the optimal dose may be decreased compared to i-line exposure on the KS-Aligner.


'''Positive tone resists:'''
*[[Specific Process Knowledge/Lithography/UVExposure/UVExposure dose|Information on UV exposure dose]]
 
'''AZ 5214E and AZ 4562'''
 
Compared to exposure on KS-Aligner, the dose on Aligner-6inch is halved.
*1.5µm: 24.5 mJ/cm<sup>2</sup> corresponding to 3.5 seconds exposure at 7 mW/cm<sup>2</sup>.
*10µm: ~140 mJ/cm<sup>2</sup> corresponding to ~20 seconds exposure at 7 mW/cm<sup>2</sup>. Multiple exposure with 10s pauses is recommended.
 
'''AZ MiR 701''' ''Preliminary results''
 
Compared to exposure on KS-Aligner, the dose on Aligner-6inch is one fifth.
*1.5µm: 31.5 mJ/cm<sup>2</sup> corresponding to 4.5 seconds exposure at 7 mW/cm<sup>2</sup>.
 
'''Negative tone resists'''
 
'''AZ 5214E image reversal'''
 
Compared to exposure on KS-Aligner, the dose on Aligner-6inch is halved.
*1.5µm: 10.5 mJ/cm<sup>2</sup> corresponding to 1.5 seconds exposure at 7 mW/cm<sup>2</sup>.
*2.2µm: 12 mJ/cm<sup>2</sup> corresponding to 1.7 seconds exposure at 7 mW/cm<sup>2</sup>.
 
Flood exposure after reversal bake: 105 mJ/cm<sup>2</sup> corresponding to 15 seconds exposure at 7 mW/cm<sup>2</sup>.
 
'''AZ nLOF 20XX''' ''Preliminary results''
 
Compared to exposure on KS-Aligner, the dose on Aligner-6inch is the same.
*1.5µm: 42 mJ/cm<sup>2</sup> corresponding to 6 seconds exposure at 7 mW/cm<sup>2</sup>.
*2µm: 49 mJ/cm<sup>2</sup> corresponding to 7 seconds exposure at 7 mW/cm<sup>2</sup>.
*3µm: 56 mJ/cm<sup>2</sup> corresponding to 8 seconds exposure at 7 mW/cm<sup>2</sup>.
*4.3µm: 70 mJ/cm<sup>2</sup> corresponding to 10 seconds exposure at 7 mW/cm<sup>2</sup>.
 
<br clear="all" />
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Alignment and UV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*soft contact, hard contact, proximity, flood exposure
*automatic loading optional for 6inch substrates
*automatic pattern recognition optional for special alignment marks
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*SU8 filter (long-pass), light intensity 7mW/cm2 in Constant Power (CP) mode
*365 nm filter optional
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*down to 1um exposure with 4inch chuck
*down to 5um exposure with 6inch chuck
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*5x5inch
*7x7inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Top Side Alignment(TSA)
*Bottom Side Alignment(BSA)
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* 110 mm wafers
* 150 mm wafers
 
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials except III-V materials
 
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*1 for 4inch substrates
*25 for 6inch substrates in automatic loading mode
|-
|}


<br clear="all" />
<br clear="all" />