Specific Process Knowledge/Doping: Difference between revisions
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!Process Temperature<sup>{{fn|1}}</sup> | !Process Temperature<sup>{{fn|1}}</sup> | ||
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*900°C - | *900°C - 1150°C | ||
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*900°C - | *900°C - 1150°C | ||
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*300°C | *300°C | ||
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* | *560°C - 620°C | ||
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*small samples | *small samples | ||
*50 mm wafers | *50 mm wafers | ||
*100 mm wafers | *100 mm wafers | ||
*150 mm wafers | |||
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*100 mm wafers (Boron and Phosphor) | *100 mm wafers (Boron and Phosphor) | ||
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<sup>{{fn|1}}</sup> In most cases you need a high temperature step to drive in and redistribute the | <sup>{{fn|1}}</sup> In most cases you need a high temperature step to drive in and redistribute the dopants in the material. This is typically done at 800°C - 1100°C in either high temperature annealing furnaces or by rapid thermal annealing. | ||
<br clear="all" /> | <br clear="all" /> | ||