Specific Process Knowledge/Thermal Process/Resist Pyrolysis Furnace: Difference between revisions

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 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>Resist Pyrolysis Furnace</b>
+|style="background:WhiteSmoke; color:black"|<b>ATV</b>
 |-
 !style="background:silver; color:black;" align="center"|Purpose
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 *Pyrolysis of different resist layers to form conductive structures
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Temperature
 |style="background:WhiteSmoke; color:black"|
-*0-1000 <sup>o</sup>C
+*0-1100 <sup>o</sup>C
 *Temperature ramp-up rate: Max 10 <sup>o</sup>C/min
 *Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
+|-
+|style="background:LightGrey; color:black"|Vacuum
+|style="background:WhiteSmoke; color:black"|
+*Yes, but using N2 and O2 process gasses
 |-
 |style="background:LightGrey; color:black"|Nitrogen flows
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 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*Several small samples (placed on a Si support wafers)
+*One-25 50 mm wafers (placed on a Si support wafers)
-*One-six 50 mm wafers (placed on a Si support wafers)
+*One-25 100 mm wafers
-*One-six 100 mm wafers
+*On2-25 150 mm  wafers
+*Several smaller samples if these are placed on a support wafer
 |-
 | style="background:LightGrey; color:black"|Allowed materials