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Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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*:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
*:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Performance
|style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100)
|style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100)
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*1.2 nm/min (60 °C)  
*1.2 nm/min (60 °C)  
*6 nm/min (80 °C)
*6 nm/min (80 °C)
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|style="background:LightGrey; color:black"|Etch rates in SiN
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*0.02 nm/min (80 °C)<sup>{{fn|1}}</sup>
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<sup>{{fn|1}}</sup> Measured by Eric Jensen from DTU-Nanotech, October 2013.
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