Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

Revision as of 11:21, 14 November 2016

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Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).

The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1000 ^oC Temperature ramp up to 300 ^oC/min
	Process pressure	1 atm Vacuum
	Gasses on the system	N₂
Substrates	Batch size	One 100 mm wafer (or 50 wafer) per run Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
Substrates	Substrate material allowed	A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials) Silicon Silicon oxides Silicon nitrides Quartz Polysilicon Titan III-V materials (on graphite carrier) Silicon wafers (new from the box or RCA cleaned) In doubt: look at the cross contamination chart or send a mail to the Furnace group.

@@ Line 56: / Line 56: @@
 *III-V materials (on graphite carrier)
 *Silicon wafers (new from the box or RCA cleaned)
-*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
+*In doubt: look at [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=164 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
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