Specific Process Knowledge/Thermal Process/D4 III-V Oven: Difference between revisions

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[[Category: Equipment |Furnace]]
[[Category: Equipment |Thermal III-V ]]
[[Category: Thermal process|Furnace]]
[[Category: Thermal process|III-V]]
[[Category: Furnaces|III-V]]
[[Category: Furnaces|III-V]]



Revision as of 14:36, 25 August 2014

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III-V Oven (D4)

III-V Oven (D4). Positioned in cleanroom area F-3.

The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)


Process knowledge


Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon