Specific Process Knowledge/Doping: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
No edit summary
Line 17: Line 17:




[[/Deposition of silicon nitride using LPCVD|Process description using method 1]]
<!-- Link to the process info page in LabAdviser -->
*[[/Deposition of silicon nitride using LPCVD|Process description using method 2]]
<!-- Link to the process info page in LabAvdiser -->


<br clear="all" />
<br clear="all" />
Line 97: Line 91:


<br clear="all" />
<br clear="all" />
===Ion implantation===
Cannot be done at Danchip. We recommend ...

Revision as of 10:04, 1 July 2014

THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

Feedback to this page: click here


Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.

  • PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
  • Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
  • Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
  • Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in




Comparison method 1 and method 2 for the process

Method 1 Method 2
Generel description Generel description - method 1 Generel description - method 2
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3



Ion implantation

Cannot be done at Danchip. We recommend ...