Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

Revision as of 08:53, 19 May 2014 view source Mdyma (talk \| contribs) danchip 584 edits →Results ← Older edit		Revision as of 10:51, 25 November 2015 view source Kabi (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 1,146 edits No edit summary Newer edit →
Line 169:		Line 169:

	Looking at the "SIMS Measurement After Drive-in Process at 1050 <sup>o</sup>C" graph, it can be seen that the two curves "Pre-dep at 950 <sup>o</sup>C" and "Pre-dep at 1000 <sup>o</sup>C" are crossing each other, but according to the theory they should not do that. Only one wafer has been meassured, so there is not that much statistical data to verify it with.		Looking at the "SIMS Measurement After Drive-in Process at 1050 <sup>o</sup>C" graph, it can be seen that the two curves "Pre-dep at 950 <sup>o</sup>C" and "Pre-dep at 1000 <sup>o</sup>C" are crossing each other, but according to the theory they should not do that. Only one wafer has been meassured, so there is not that much statistical data to verify it with.


			==Doping profile after Phosphorus Predep process==