Specific Process Knowledge/Lithography/Development

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Coaters: Comparison Table

Equipment		Developer-1 and 2	Developer-6inch	SU8-Developer	Developer-TMAH
Purpose		Coating and baking of AZ5214E resist AZ4562 resist E-beam resist	Coating and baking of AZ5214E resist AZ4562 resist SU8 resist	Coating and baking of SU8 resist	In-line substrate HMDS priming Coating and baking of AZ MiR 701 (29cps) resist AZ nLOF 2020 resist Post-exposure baking at 110°C
Performance	Substrate handling	Cassette-to-cassette Edge handling chuck	Single substrate Non-vacuum chuck for fragile substrates	Cassette-to-cassette
	Permanent media	AZ5214E resist AZ4562 resist Acetone for chuck cleaning Acetone for drip pan	AZ5214E resist PGMEA for edge bead removal Acetone for chuck cleaning	AZ MiR 701 (29cps) resist AZ nLOF 2020 resist PGMEA for backside rinse and edge-bead removal PGMEA for spinner bowl cleaning and vapor tip bath
	Manual dispense option	2 automatic syringes	yes pneumatic dispense for SU8 resist	no
Process parameter range	Spindle speed	100-5000 rpm	100-5000 rpm	10 - 9990 rpm
	Gyrset	optinal	optinal	no
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafer 150 mm wafer	100 mm wafers 150 mm wafers (tool change required)
	Batch size	1-24	1	1-25
	Allowed materials	All cleanroom materials except III-V materials	All cleanroom materials except III-V materials	Silicon Glass

Developer-1 and Developer-2

Developer-1 (right) and Developer-2 (left) are located in C-1

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Developer-1 and Developer-2 are manual developer baths for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the user prior to development start, and the wafer cassette is agitated manually by the user during development. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.

The user APV, and contact information can be found in LabManager: Developer-1 Developer-2

Process information

Standard development time using vigorous agitation:

AZ 5214E:

• 1.5µm resist: 60 sec
• 2.2µm resist: 70 sec
• 4.2µm resist: 3 min

AZ 4562:

• 10µm resist: 5 min

Standard development procedure:

• Before using one of developer baths, please check the "Litho4_Dev-7up-KOH" logbook to find out when they were last used. A fresh bath can be reused without problems.
• The main rule is a developer made yesterday must be changed.
• During development, agitate the substrates by moving the carrier up and down.
• Rinse substrates with water for 4-5 min. after development.
• Spin-dry substrates or dry with nitrogen gun after rinsing.

Procedure for making a new developer

1. Switch off the heater, and dump the old developer.

2. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood.

3. Fill the bath with the developer mixture, and heat it to 22°C before use.

Equipment performance and process related parameters

Purpose		Development of AZ 5214E AZ 4562
Developer		AZ 351B diluted 1:5 in water (NaOH and sodium borate salt)
Method		Submersion
Process parameters	Temperature	22°C
	Agitation	Manual
	Rinse	DI water
Substrates	Substrate size	100 mm wafers
	Allowed materials	Silicon, glass, and polymer substrates Film or pattern of all types
	Batch	1-8

Developer-6inch

The Developer-6inch bench is located in E-5

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The Developer-6inch bench is an automated developer bath for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the equipment prior to development start. The developer is circulated during development, and the wafer cassette may be agitated by a mechanical elevator. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.

The user manual, user APV, and contact information can be found in LabManager

Process information

Standard development time:

AZ 5214E:

• 1.5µm resist: 60 sec
• 2.2µm resist: 70 sec
• 4.2µm resist: 3 min

AZ 4562:

• 10µm resist: 5 min

Equipment performance and process related parameters

Purpose		Development of AZ 5214E AZ 4562
Developer		AZ 351B diluted 1:5 in water (NaOH and sodium borate salt)
Method		Submersion
Process parameters	Temperature	22°C
	Agitation	Circulation and mechanical
	Rinse	DI water
Substrates	Substrate size	100 mm wafers 150 mm wafers
	Allowed materials	Silicon, glass, and polymer substrates Film or pattern of all types
	Batch	1-25

SU8-Developer

The SU8-Developer bench is located in C-1

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The SU8-Developer bench is a manually operated chemical bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA and dried in the bench.

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose		Development of SU-8
Developer		mr-Dev 600 (PGMEA)
Method		Submersion
Process parameters	Temperature	Room temperature
	Agitation	Magnetic stirrer
	Rinse	IPA
Substrates	Substrate size	100 mm wafers
	Allowed materials	Silicon and glass substrates Film or pattern of all but Type IV
	Batch	1-8

Developer-TMAH

Developer-TMAH is located in C-1

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Developer-TMAH is a manually operated, single substrate spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates are loaded manually one by one into the developer. Developer dispense, puddle time, and a rough water rinse is performed automatically by the equipment.

The user manual, user APV, and contact information can be found in LabManager

Process information

Standard process recipes

• nLoF_40x2: double puddle, 40s. For development of AZ nLOF 2020 resist.
• MiR701 60s: single puddle, 60s. For development of AZ MiR 701 resist.
• DUV 60s: single puddle, 60s. For development of DUV resists.

Utility recipes

• UTIL-DR: Dome rinse.
• UTIL-BE: Bottle change. Danchip use only.

Equipment performance and process related parameters

Purpose		Development of AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists
Developer		AZ 726 MIF (2.38% TMAH in water)
Method		Puddle
Process parameters	Temperature	Room temperature
	Agitation	none
	Rinse	DI water
Substrates	Substrate size	100 mm wafers 150 mm wafers
	Allowed materials	Silicon, glass, and polymer substrates Film or pattern of all types
	Batch	1