Specific Process Knowledge/Lithography/Development

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Coaters: Comparison Table

Equipment		Developer 1 and 2	Developer-6inch	Developer-TMAH
Purpose		Coating and baking of AZ5214E resist AZ4562 resist E-beam resist	Coating and baking of AZ5214E resist AZ4562 resist SU8 resist	In-line substrate HMDS priming Coating and baking of AZ MiR 701 (29cps) resist AZ nLOF 2020 resist Post-exposure baking at 110°C
Performance	Substrate handling	Cassette-to-cassette Edge handling chuck	Single substrate Non-vacuum chuck for fragile substrates	Cassette-to-cassette
	Permanent media	AZ5214E resist AZ4562 resist Acetone for chuck cleaning Acetone for drip pan	AZ5214E resist PGMEA for edge bead removal Acetone for chuck cleaning	AZ MiR 701 (29cps) resist AZ nLOF 2020 resist PGMEA for backside rinse and edge-bead removal PGMEA for spinner bowl cleaning and vapor tip bath
	Manual dispense option	2 automatic syringes	yes pneumatic dispense for SU8 resist	no
Process parameter range	Spindle speed	100-5000 rpm	100-5000 rpm	10 - 9990 rpm
	Gyrset	optinal	optinal	no
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafer 150 mm wafer	100 mm wafers 150 mm wafers (tool change required)
	Batch size	1-24	1	1-25
	Allowed materials	All cleanroom materials except III-V materials	All cleanroom materials except III-V materials	Silicon Glass

Developer-1 and Developer-2

Developer-1 and Developer-2 located in C-1

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Developer-1 and Developer-2

The user APV, and contact information can be found in LabManager: Developer-1 Developer-2

Process information

• Before using a one of developer batch's please check the "Litho4_Dev-7up-KOH" logbook to find out when they were used last time. A fresh bath can be reused without problems.

• The main rule is the develop from yesterday must be changed.

• Substrates rinses with with water for 4-5 min. after developing.

• Substrates can been spin-dried or dried with nitrogen gun after the rinse.

The standard developing time AZ resist:

• 1.5µm resist is 60 sec
• 2.2µm resist is 70 sec
• 4.2µm resist is 3 min
• 10µm resist is 5 min

Procedure for making a new developer

1. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood.

2. Fill the bath with the developer mixture and heat it to 22 °C before use.

Equipment performance and process related parameters

Purpose		Spin coating and soft baking UV sensative resists Spin coating and soft baking E-beam resists
Resist		AZ5214E AZ4562 E-beam resists
Performance	Coating thickness	AZ5214E 1-4,2 µm AZ4526 6,2-25 µm E-beam resits 0,1-1 µm
Process parameters	Spin speed	100 - 5000 rpm
	Spin acceleration	100 - 10000 rpm/s
	Hotplate temperature	90°C for softbaking of AZ5214E resist 100°C for softbaking of AZ4562 resist 110°C for reverse baking of AZ5214E resits 180°C for softbaking of e-beam resits
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials except III-V materials
	Batch	1 - 24

Developer-6inch

Spin Track 1 + 2 in C-1

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Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.

The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.

The user manual, user APV, and contact information can be found in LabManager

Process information

• General Spin Track 1 + 2 process information

Equipment performance and process related parameters

Purpose		Development of AZ 5214E AZ 4562
Developer		AZ 726 MIF (2.38% TMAH in water)
Method		Puddle
Process parameters	Temperature	Room temperature
	Agitation	none
Substrates	Substrate size	100 mm wafers 150 mm wafers
	Allowed materials	All Silicon, glass and polymer substrates
	Batch	1-25

SU8-Developer

Developer-TMAH is placed in C-1

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SU8-Developer is a manually operated, ...

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose		Development of SU-8
Developer		PGMEA
Method		Submersion
Process parameters	Temperature	Room temperature
	Agitation	Magnetic stirrer
Substrates	Substrate size	100 mm wafers
	Allowed materials	All Silicon and glass substrates
	Batch	1-8

Developer-TMAH

Developer-TMAH is placed in C-1

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Developer-TMAH is a manually operated, single substrate spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent).

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose		Development of AZ nLOF AZ MiR 701 AZ 5214E AZ 4562
Developer		AZ 726 MIF (2.38% TMAH in water)
Method		Puddle
Process parameters	Temperature	Room temperature
	Agitation	none
Substrates	Substrate size	100 mm wafers 150 mm wafers
	Allowed materials	All Silicon, glass and polymer substrates
	Batch	1