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Specific Process Knowledge/Lithography/Development: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
Line 152: Line 152:
2. Fill the bath with the developer mixture and heat it to 22 °C before use.
2. Fill the bath with the developer mixture and heat it to 22 °C before use.


===Overview of develop process===
{| border="2" cellspacing="0" cellpadding="4" align="left"
|-
|'''General description'''
|Develop of AZ resist
|-
|'''Chemical solution'''
|NaOH+ H<sub>2</sub>O (1:5)
|-
|'''Process temperature'''
|22 <sup>o</sup>C
|-
|'''Batch size'''
|1-8 wafers at a time
|-
|'''Size of substrate'''
|
*4" wafers
*Other sizes can be developed using a single wafer holder.
|-
|}


'''The user APV, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=62 Developer-1] [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=63 Developer-2]'''
'''The user APV, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=62 Developer-1] [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=63 Developer-2]'''
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