Jump to content

Specific Process Knowledge/Lithography/Development: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
Line 124: Line 124:


==Developer-1 and Developer-2==
==Developer-1 and Developer-2==
[[Image:SSEspinner2.jpg|200 × 200px|thumb|right|The SSE spinner MAXIMUS: positioned in E-5]]
[[Image:SSEspinner2.jpg|200 × 200px|thumb|right|Developer-1 and Developer-2 located in C-1]]


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Developer-1_and_Developer-2 click here]'''
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Developer-1_and_Developer-2 click here]'''


SSE Spinner, Maximus 804, SSE Sister Semiconductor Equipment is a resist spinning system at Danchip which can be used for spinning on 2", 4" and 6" substrates.
Developer-1 and Developer-2


The system is equipped with 2 different resists lines:
There are 2 developer baths, develop 1 and develop 2, witch are the same.
*AZ 5214E
*AZ 4562
and  
*2 syringe lines, which can be used for spinning of e-beam resist.  


'''The user manual, user APV, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=62 Developer-1] [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=63 Developer-2]'''
Here are some main rules for developer baths use:
 
*Before using a one of developer batch's please check the "Lithography logbog1" to find out when they were used last time. The fresh bath can be easily reused.
 
*The main rule is the develop from yesterday must be changed.
 
*Substrates rinses with with water for 4-5 min. after developing.
 
*Substrates can been spin-dried or dried with nitrogen gun after the rinse.
 
The standard developing time AZ resist:
*1.5µm resist is 60 sec
*2.2µm resist is 70 sec
*4.2µm resist is 3 min
*9,5µm resist is 5min.
 
====The procedure for making a fresh developer====
 
1. 800ml "Developer AZ 351" is mixed with 4000ml water in a special container in the fume hood.
 
2. Fill the bath with a fresh developer and heat it to 22<sup>o</sup>C before use.
 
===Overview of develop process===
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
|-
|'''General description'''
|Develop of AZ resist
|-
|'''Chemical solution'''
|NaOH+ H<sub>2</sub>O (1:5)
|-
|'''Process temperature'''
|22 <sup>o</sup>C
|-
|'''Batch size'''
|1-8 wafers at a time
|-
|'''Size of substrate'''
|
*4" wafers
*Other sizes can be developed using a single wafer holder.
|-
|}
 
'''The user APV, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=62 Developer-1] [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=63 Developer-2]'''